| Name | Dr. N. PUSHPA |
|---|---|
| Designation | Assistant Professor & Head |
| Email – Id | [email protected] |
| Qualification | M.Sc., Ph.D |
| No. of Publications | 46 |
| Sl.No | Qualification/Programme | Institution / University | Year of Passed Out /Period |
|---|---|---|---|
| 1 | Doctor of Philosophy, Ph. D | University of Mysore | 2008-2013 |
| 2 | M.Sc., (Physics) | Bangalore University | 1996-1998 |
| Sl.No | Institution Name / Employer Name | Designation / Department | Period |
|---|---|---|---|
| 1 | JSS College of Arts, Commerce & Science, Ooty Road, Mysore | Assistant Professor and Head | 08/2013 to till date |
| 2 | DoS in Physics, University of Mysore, Manasagangotri, Mysore | JRF (Junior Research Fellow) and SRF (Senior Research Fellow) | 2008-2013 |
| 3 | Lecturer | B.P.Indian College, Bangalore | 06/2003 to 04/2005 |
| 4 | Lecturer | St.Joseph`s College, Bangalore | 07/2001 to 05/2003 |
| 5 | Lecturer | Lowry Memorial College, Bangalore | 08/1998 to 06/2001 |
| Sl. No. | Title | Name of Journal | Date of Publication | Volume No./Issue No./Page No. |
|---|---|---|---|---|
| 1 | ||||
| 2 | ||||
| 3 |
RESEARCH PUBLICATIONS Refereed Journal Papers/Proceedings:
1. N. Pushpa “ 60Co Gamma and High Energy Ion Impacts on Threshold Characteristics and its Recovery in N-Channel Depletion MOSFETs”, Indian Journal of Physics, September 2021 (Impact factor-1.377) Accepted
2. N. Pushpa and A. P. Gnana Prakash, “The Influence of Radiation on the Electrical Characteristics of MOSFET and its revival by Different Annealing Techniques”, Radiation Effects and Defects in Solids, October 2021 (Impact factor-0.67) Accepted
3. N. Pushpa, “An Influence of Linear Energy Transfer of High Energy Ions on the Electrical Characteristics of NPN rf Power Transistors” International Journal of Innovation in Advanced Physics, Vol. 01, (1), pp5-11, 2021.
4. N. Pushpa, “60Co Gamma Influence on Transconductance in N-Channel MOS Device and its Revival under Isochronal Annealing Technique” International Journal of Innovation in Advanced Physics,Vol. 01, (1), pp 40-43, 2021.
5. T. M. Pradeep, Vinayakaprasanna N. Hegde, N. Pushpa, K.G. Bhushan, Mukesh and A. P. Gnana Prakash, “An Investigation of 10 MeV Electron Irradiation on Silicon NPN Transistors”, AIP Conf. Proc, Vol. 2265, pp 030482-1-4, 2020.
6. Arshiya Anjum, T. M. Pradeep, N. H. Vinayakprasanna, N. Pushpa, Ambuj Tripathi and A. P. Gnana Prakash, “Analysis of 80 MeV Carbon and 80 MeV Nitrogen ion irradiation effects on Nchannel MOSFETs”, IEEE Transactions on Device and Materials Reliability, Vol. 19, No.4, pp 696- 703, December 2019.(Impact factor- 1.512).
7. T. M. Pradeep, Vinayakprasanna N. Hegde, N. Pushpa, K. G. Bhushan, Ambuj Tripathi, K. Asokan and A. P. Gnana Prakash, “Swift Heavy Ions Induced Degradation on the Electrical Characteristics of Silicon NPN Power Transistors”, Radiation Effects and Defects in Solids, Vol.174, Nos. 9-10, pp 859-872, November 2019 (Impact factor-0.513).
8. Vinayakprasanna N. Hegde, K. C. Praveen, T. M. Pradeep, N. Pushpa, John D. Cressler, Ambuj Tripathi, K. Asokan and A. P. Gnana Prakash, “High Energy Swift Heavy Ion Irradiation and Annealing Effects on DC Electrical Characteristics of 200 GHz SiGe HBTs”, Nuclear Engineering and Technology, Vol. 51, pp 1428-1435, July 2019 (Impact factor- 1.55).
9. Vinayakprasanna N. Hegde, K. C. Praveen, T. M. Pradeep, N. Pushpa, John D Cressler, Ambuj Tripathi, K. Asokanand A. P. Gnana Prakash, “A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs”, IEEE Transaction on Device and Materials Reliability, Vol. 18, No.4, pp 592-598, December 2018.(Impact factor- 1.512).
10. T. M. Pradeep, Vinayakprasanna N. Hegde, N. Pushpa, K. G. Bhushan and A. P. Gnana Prakash, “Comparisons of 5 MeV Proton and 1 MeV Electron Irradiation on Silicon NPN RF Power Transistors”, Indian Journal of Pure and Applied Physics, Vol.56, pp 646-649, August 2018 (Impact factor- 0.882).
11. A. P. Gnana Prakash, M. N. Bharathi, Vinayakprasanna N. Hegde,T. M. Pradeep,N. Pushpa and Ambuj Tripathi, “The Effects of High Energy Ion Irradiations on the I-V Characteristics of Silicon NPN Transistors”, Radiation Effects and Defects in Solids, Vol.173, Nos. 7-8, pp 683-693, July 2018 (Impact factor-0.513).
12. A. P. Gnana Prakash, T. M. Pradeep, Vinayakprasanna N. Hegde, N. Pushpa, P. K. Bajpai, S. P. Patel, Tarkeshwar Trivedi and K.G. Bhushan, “A Comparison of 5 MeV Proton and Co-60 Gamma Irradiation on Silicon NPN rf Power Transistors and N-Channel Depletion MOSFETs”, Radiation Effects and Defects in Solids, Vol.172, Nos. 11-12, pp 952-963, January 2018 (Impact factor-0.513).
13. A. P. Gnana Prakash, Vinayakprasanna N. Hegde, T. M. Pradeep, N. Pushpa, P. K. Bajpai, S. P. Patel, Tarkeshwar Trivedi and J. D. Cressler, “5 MeV Proton Irradiation Effects on 200 GHz SiliconGermanium Heterojunction Bipolar Transistors”, Radiation Effects and Defects in Solids, Vol.172, Nos. 11-12, pp 922-930, January 2018 (Impact factor-0.513).
14. M. N. Bharathi, N. H. Vinayakprasanna, Arshiya Anjum, T. M. Pradeep, N. Pushpa, K. C. Praveen, K. G. Bhushan and A. P. Gnana Prakash, “Comparison of 1 MeV Electron, Co-60 Gamma and 3 1MeV Proton Irradiation Effects on Silicon NPN Transistors”, Radiation Effects and Defects in Solids, Vol.172, No.3-4, pp 235-249, May 2017. (Impact factor-0.513).
15. T. M. Pradeep, N. H. Vinayakprasanna, B.C. Hemaraju, K.C. Praveen, Arshiya Anjum, N. Pushpa, K. G. Bhushan and A. P. Gnana Prakash, “An Investigation of 80 MeV Nitrogen Ion Irradiation on Silicon NPN Transistors”, AIP Conf. Proc. 1832, 120004-1-3, 2017. (Impact factor-0.5).
16. Arshiya Anjum, N. H. Vinayakprasanna, T. M. Pradeep, N. Pushpa, J. B. M. Krishna and A. P. Gnana Prakash, “A Comparison of 4 MeV Proton and Co-60 Gamma Irradiation Induced Degradation in the Electrical Characteristics of N-Channel MOSFETs”, Nucl. Instr. Meth. Phys. Res. B, Vol. 379, pp 265–271, June 2016 (Impact factor-1.124).
17. B. C. Hemaraju, M. A. Ahlam, N. Pushpa, K. M. Mahadevan and A. P. Gnana Prakash, “Synthesis, Growth and Characterization of a New Promising Organic Nonlinear Optical Crystal: 3-[(1-(2- phenylhydrazinylidene) ethyl]-2H-chromen-2-one”, Journal of Optics, Vol. 45, No.1, pp 73-80, March 2016(Impact factor-2.059).
18. M. N. Bharathi, N. Pushpa, N. H. Vinayakprasanna and A. P. Gnana Prakash, “A Comparison of Lower LET and Higher LET Heavy Ion Irradiation Effects on Silicon NPN rf Power Transistors”, Nucl. Instr. Meth. Phys. Res. A., Vol. 822, pp 34-42, June 2016 (Impact factor-1.216).
19. M. N. Bharathi, N. Pushpa, N. H. Vinayakprasanna, and A. P. Gnana Prakash, “80 MeV C6+Ion Irradiation Effects on the DC Electrical Characteristics of Silicon NPN Power Transistors”, AIP Conf. Proc. 1731, 120013-1–120013-3, 2016 (Impact factor-0.5).
20. T. M. Pradeep, N. H. Vinayakaprasanna, Arshiya Anjum, M. N. Bharathi, N. Pushpa and A. P. Gnana Prakash, " High Total Dose Co-60 Gamma Irradiation and Annealing Studies on NPN rf Power Transistors”, ISST Journal of Applied Physics, Vol. 6, No. 2, pp 16-21, December 2015.
21. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, P. S. Naik, S. K. Gupta and D. Revannasiddaiah, “Swift Heavy Ion Irradiation and Annealing Studies on the I-V Characteristics of N-channel Depletion MOSFETs”, Indian Journal of Physics, Vol.89(9), pp 943-950, September 2015 (Impact factor-1.377).
22. N. Pushpa and A. P. Gnana Prakash “High Energy Proton Irradiation Effects on Subthreshold Characteirstics of N-Channel DMOSFETS” JSSCM Journal, Vol. 4 (1) 45-46, 2015 (ISSN: 2277- 145X).
23. B. C. Hemaraju, M. A. Ahlam, N. Pushpa, K. M. Mahadevan and A. P. Gnana Prakash, “Synthesis, Growth and Characterization of a New Promising Organic Nonlinear Optical Crystal: 4–nitrophenyl hydrazone”, Spectrochimica Acta Part A, Vol.151, pp 854-860, December 2015 (Impact factor2.353).
24. A. P. Gnana Prakash and N. Pushpa , “Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices”, Solid State Phenomena, Vol. 239, pp 37-71, 2015 (Review Paper).
25. N. H. Vinayakprasanna, K. C. Praveen, N. Pushpa, John D. Cressler and A. P. Gnana Prakash, “A Comparison of 100 MeV Oxygen Ion and Co-60 Gamma Irradiation Effects on Advanced 200 GHz SiGe heterojunction bipolar transistors”, Indian Journal of Physics, Vol.89(8), pp 789-796, August 2015. (Impact factor-1.377).
26. N. H. Vinayakprasanna, K. C. Praveen, N. Pushpa, Ambuj Tripathi, John D. Cressler and A. P. Gnana Prakash, “80 MeV Carbon Ion Irradiation Effects on Advanced 200 GHz SiGe Heterojunction Bipolar Transistors” Advanced Material Letters, Vol. 6(2), pp 120-126, February 2015. (Impact factor-1.90).
27. A. P. Gnana Prakash, K. C. Praveen, N. Pushpa and John D. Cressler, “The Reliability Studies of Nano-Engineered SiGe HBTs Using Pelletron Accelerator”, AIP Conf. Proc. 1661, 050008-1– 050008-6, 2015 (Impact factor-0.5).
28. N. Pushpa and A. P. Gnana Prakash, “Damage Correlations in Semiconductor Devices Exposed to Gamma and High Energy Swift Heavy Ions”, AIP Conf. Proc. 1661, 050007-1–050007-6, 2015 (Impact factor-0.5).
29. M. N. Bharathi, K. C. Praveen, N. Pushpa and A. P. Gnana Prakash, “High Total Dose Proton and 60Co Gamma Irradiation Effects on Silicon NPN rf Power Transistors”, International Journal of Latest Technology in Engineering, Management and Applied Science, Vol. 3(6), pp 40-47, June 2014 4 (Impact factor – 2.115).
30. K. C. Praveen, N. Pushpa, M. N. Bharathi, John D. Cressler, A. P. Gnana Prakash, “A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT”, Physics of Semiconductor Devices: Environmental Science and Engineering, pp 113-116, 2014.
31. M. N. Bharathi, K. C. Praveen and N. Pushpa and A. P. Gnana Prakash “High Total Dose Proton Irradiation Effects on Silicon NPN rf Power Transistors”, AIP Conf. Proc. 1591, 1446-1448, 2014 (Impact factor-0.5).
32. K. C. Praveen, N. Pushpa, P. S. Naik, John. D. Cressler, H. B. Shiva, Shammi Verma, Ambuj Tripathi and A. P. Gnana Prakash, “In-Situ Investigation of 75 MeV Boron and 100 MeV Oxygen Ion Irradiation Effects on 50 GHz SiGe HBTs” Radiation Effects and Defects in Solids, Vol. 168, No. 7-8, pp 620-624, July 2013. (Impact factor-0.513)
33. K. C. Praveen, N. Pushpa, H. B. Shiva, J. D. Cressler, Ambuj Tripathi and A. P. Gnana Prakash, “A Comparison of 75 MeV Boron And 50 Mev Lithium Ion Irradiation Effects on 200 GHz SiGe HBTs”, AIP Conf. Proc. 1512, 1030-1031, 2013. (Impact factor-0.5).
34. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, S. K. Gupta and D. Revannasiddaiah, “An Analysis of 175 MeV Nickel Ion Irradiation and Annealing Effects on NPN rf Power Transistors”, Current Applied Physics, Vol. 13, No.1, pp 66-75, January 2013. (Impact factor-2.212)
35. K. C. Praveen, N. Pushpa, P. S. Naik, John. D. Cressler, Ambuj Tripathi and A. P. Gnana Prakash, “Application of a Pelletron Accelerator to Study Total Dose Radiation Effects on 50 GHz SiGe HBTs”, Nucl. Instr. Meth. Phys. Res. B, Vol. 273, pp 43-46, Feb 2012. (Impact factor-1.124)
36. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, P. S. Naik, John. D. Cressler, S. K. Gupta and D. Revannasiddaiah, “Reliability Studies on NPN RF Power Transistors under Swift Heavy Ion Irradiation”, Nucl. Instr. Meth. Phys. Res. B, Vol. 273, pp 36-39, Feb 2012. (Impact factor-1.124)
37. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, P. S. Naik, Ambuj Tripathi, S. K. Gupta and D. Revannasiddaiah, “The Effect of Swift Heavy Ion Irradiation on Threshold Voltage, Transconductance and Mobility of DMOSFETs”, Nucl. Instr. Meth. Phys. Res. B, Vol. 273, pp 40- 42, Feb 2012. (Impact factor-1.124)
38. A. P. Gnana Prakash, N. Pushpa, K. C. Praveen, P. S. Naik and D. Revannasiddaiah, “Evaluation of Pelletron Accelerator Facility to Study Radiation Effects on Semiconductor Devices”, AIP Conf. Proc. 1447, 489-490, 2012 (Impact factor-0.5).
39. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, P. S. Naik, S. K. Gupta and D.Revannasiddaiah, “The Influence of 175 MeV Ni13+ Ion and Co-60 Gamma Irradiation Effects on Subthreshold Characteristics of N-Channel Depletion MOSFETs”, AIP Conf. Proc. 1447, 1043-1044, 2012 (Impact factor-0.5).
40. K. C. Praveen, N. Pushpa, AmbujTripati, D. Revannasiddaiah, John D. Cressler and A. P. Gnana Prakash, “50 MeV Li3+ Ion Irradiation Effects on Advanced 200 GHz SiGe HBTs”., Radiation Effects and Defects in Solids., Vol.166, No.8-9, pp 710-717, Aug-Sept 2011. (Impact factor-0.513)
41. K.C. Praveen, N. Pushpa, John D Cressler and A. P. Gnana Prakash, “Analysis of High Energy Ion, Proton and Co-60 Gamma Radiation Induced Damage in Advanced 200 GHz SiGe HBTs”, International Journal of Nano-Electronics and Physics., Vol.3, No.1, pp 348-357, 2011.
42. N. Pushpa, A. P. Gnana Prakash,S. K. Gupta and D. Revannasiddaiah, “Swift Heavy Ion Irradiation Effects on NPN rf Power Transistors”, AIP Conf. Proc. 1349, 1007-1008, 2011 (Impact factor-0.5).
43. K. C. Praveen, N. Pushpa, Y. P. Prabakara Rao, G. Govindaraj, John D. Cressler and A. P. Gnana Prakash, “Application of Advanced 200 GHz Si-Ge HBTs for High Dose Radiation Environments”, Solid State Electronics, Vol. 54, No.12, pp 1554-1560, December 2010. (Impact factor-1.504)
44. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, Y. P. Prabhakara Rao, AmbujTripatiand D.Revannasiddaiah, “An Analysis of 100 MeV F8+ Ion and 50 MeV Li3+ Ion Irradiation Effects on Silicon NPN rf Power Transistors”, Nucl. Instr. Meth. Phys. Res. A. Vol. 620, No.2-3, pp 450-455, August 2010. (Impact factor-1.216)
45. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, Y. P. Prabhakara Rao, AmbujTripati, G. Govindarajand D.Revannasiddaiah, “A Comparison of 48 MeV Li3+ Ion, 100 MeV F8+ Ion and Co60 Gamma Irradiation Effect on N-channel MOSFETs”, Nucl. Instr. Meth. Phys. Res. A, Vol. 613, 5 No.2, pp 280-289, February 2010. (Impact factor-1.216)
46. N. Pushpa, A. P. Gnana Prakash, K. C. Praveen and D. Revannasiddaiah, “An Investigation of Electron and Oxygen Ion Damage in Si NPN RF Power Transistors”, Radiation Effects and Defects in Solids, Vol.164, No.10, pp 592-603, September 2009. (Impact factor-0.513)
AWARDS AND FELLOWSHIPS • Junior Research Fellowship awarded from DAE-BRNS, Government of India (2009-2012) • Senior Research Fellowship awarded from DAE-BRNS, Government of India (2012-2013)
RESEARCH INTERESTS
• Characterization of semiconductor devices using I-V, C-V, DLTS and other electrical techniques
• Reliability studies on semiconductor devices and circuits
• Low temperature and high temperature studies on semiconductor devices
• High energy radiation effects on semiconductor devices and circuits (space/high energy physics applications)
TEACHING COURSES
Nuclear and Particle Physics, Nuclear Physics, Classical Mechanics, Statistical Mechanics, Mathematical Methods in Physics (Special functions), Accelerator Physics
Books:
1 1. N. Pushpa and A. P. Gnana Prakash “Application of Palletron Accelerator to Study Total Dose Radiation Effects on MOS and Bipolar Devices” Lambert Academic Publishers Germany, 2016. (ISBN No. 978-3-659-92596-2)
Conference/Workshop Presentation: 64
1. T. M. Pradeep, Vinayakaprasanna N. Hegde, N. Pushpa, K.G. Bhushan, Mukesh and A. P. Gnana
Prakash, “An Investigation of 10 MeV Electron Irradiation on Silicon NPN Transistors”, 64th DAE
Solid State Physics Symposium, IIT, Jodhpur, 18-22 December, 2019.
2. T. M. Pradeep, Vinayakaprasanna N. Hegde, N. Pushpa, K.G. Bhushan, Mukesh Kumar, Ambuj
Tripathi, K. Asokanand A. P. Gnana Prakash, “A Comparison of Swift Heavy Ion with Electron and
Gamma Irradiated Silicon NPN RF Power Transistors”, International Conference on Ion Beams in
Materials Engineering and Characterizations (IBMEC-2018), Inter-University Accelerator Center,
New Delhi, 09-12 October, 2018.
3. N. H. Vinayakprasanna, T. M. Pradeep, N. Pushpa, John D. Cressler, Ambuj Tripathi, K.
Asokan and A. P. Gnana Prakash, “Studies on the Low Temperature Lithium Ion Irradiation
Effects on SiGe HBTs”, International Conference on Ion Beams in Materials Engineering and
Characterizations (IBMEC-2018), Inter-University Accelerator Center, New Delhi, 09-12 October,
2018.
4. N. H. Vinayakprasanna, K. C. Praveen, T. M. Pradeep, N. Pushpa, John D. Cressler, Ambuj
Tripathi, K. Asokanand A. P. Gnana Prakash, “In-situ Investigation of Ion Irradiation Effects on DC
Electrical Characteristics of 200 GHz SiGe HBTs”, International Conference on Ion Beams in
Materials Engineering and Characterizations (IBMEC-2018), Inter-University Accelerator Center,
New Delhi, 09-12 October, 2018.
5. T. M. Pradeep, Vinayakprasanna N. Hegde, N. Pushpa, K. G. Bhushan and A. P. Gnana Prakash,
“Comparisons of 5 MeV Proton and 1 MeV Electron Irradiation on Silicon NPN rf Power
Transistors”, Proc. of National Conference on Radiation Physics, Department of Physics, Bangalore
University, Bangalore, 23-24 November, 2017.
6. A. P. Gnana Prakash, Vinayakprasanna N. Hegde, T. M. Pradeep, N. Pushpa, P. K. Bajpai, S. P.
Patel and TarkeshwarTrivedi, “5 MeV Proton Irradiation Effects on 200 GHz Silicon-Germanium
Heterojunction Bipolar Transistors”, International Conference on Accelerators in Materials and
Medical Sciences, Amity University, Dubai, 05-07 October, 2017.
7. A. P. Gnana Prakash, T. M. Pradeep, Vinayakprasanna N. Hegde, N. Pushpa, P. K. Bajpai, S. P.
Patel and Tarkeshwar Trivedi, “A Comparisons of 5 MeV Proton and Co-60 Gamma irradiation on
Silicon NPN rf Power Transistors and N-channel Depletion MOSFETs”, International Conference
on Accelerators in Materials and Medical Sciences, Amity University, Dubai, 05-07 October, 2017.
8. A. P. Gnana Prakash,M. N. Bharathi, N. H. Vinayakprasanna,T. M. Pradeep andN. Pushpa, “The
Effects of High Energy Ion Irradiations on the I-V Characteristics of Silicon NPN Transistors”,
International Conference on Accelerators in Materials and Medical Sciences, Amity University,
Dubai, 05-07 October, 2017.
9. T. M. Pradeep, N. H. Vinayakprasanna, B.C. Hemaraju, K.C. Praveen, Arshiya Anjum, N. Pushpa,
K. G. Bhushan and A. P. Gnana Prakash, “An Investigation of 80 MeV Nitrogen Ion Irradiation on
Silicon NPN Transistors”, 61st DAE Solid State Physics Symposium, KIIT, Bhubaneshwar, 26-30
December, 2016.
10. T. M. Pradeep, N. H. Vinayakaprasanna, Arshiya Anjum, N. Pushpa, K.G. Bhushan and A. P.
Gnana Prakash, “A Comparision of 10 MeV Electron and Co-60 Gamma Radiation Effects on NPN
Silicon Transistors”, National symposium on Application of Radiation, Radiation environment and
Human Health, University of Mysore, Mysore, 20-21 December, 2016.
11. Arshiya Anjum, N. H. Vinayakaprasanna, T. M. Pradeep, M. N. Bharathi, N. Pushpa, J. B. M.
Krishna, and A. P. Gnana Prakash, “The effects of Co-60 gamma irradiation on the I-V
characteristics of the N-channel DMOSFETs”, National Symposium on Application of Radiation,
Radiation Environment and Human Health, University of Mysore, Mysore, 20-21 December, 2016.
Annual Reports: 13
1. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, AmbujTripati, Y. P. Prabhakara Rao and D. Revannasiddaiah, “The Effect of 100 MeV Fluorine Ion Irradiation on Interface and Oxide Trapped Charge of MOS Devices”, IUAC Annual Report, Page no. 252-253, 2008-2009.
2. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, AmbujTripati, Y. P. Prabhakara Rao and D. Revannasiddaiah, “The Effect of 50 MeV Li3+ ion irradiation on generation-recombination centers in SiO2”, IUAC Annual Report, Page no. 253-254, 2008-2009.
3. K. C. Praveen, N. Pushpa, Y. P. Prabhakara Rao, AmbujTripati, Somya Gupta, Navakanta Bhat and A. P. Gnana Prakash, “Effect of 50 MeV Li3+ ion irradiation on 200 GHz SiGe Heterojunction Bipolar Transistors”, IUAC Annual Report, Page no. 254-256, 2008-2009.
4. N. Pushpa, K.C. Praveen, A.P. Gnana Prakash, Y.P. Prabhakara Rao, AmbujTripati, G. Govindaraj and D. Revannasiddaiah, “The effects of linear energy transfer on degradation of I-V characteristics of N-Channel MOSFETs”, IUAC Annual Report, Page no. 201-203, 2009-2010.
5. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, Y. P. Prabhakara Rao, AmbujTripati and D. Revannasiddaiah, “Comparison of different LET high energy ion irradiation effects on Si BJTs”, IUAC Annual Report, Page no. 203-205, 2009-2010.
6. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, AmbujTripati, S. K. Gupta and D. Revannasiddaiah, “140 MeV Silicon Ion Irradiation Effects on the I-V Characteristics of NPN RF Power Transistors”, IUAC Annual Report, Page no. 213-214, 2010-2011.
7. N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, S. K. Gupta, AmbujTripati and D. Revannasiddaiah, “The effect of 140 MeV Silicon Ion Irradiation on Subthreshold and Transconductance Characteristics of N-channel Depletion MOSFETs”, IUAC Annual Report, Page no. 214-215, 2010-2011.
8. K. C. Praveen, N. Pushpa, John D Cressler, AmbujTripati and A. P. Gnana Prakash, “Assessment of 50 GHz SiGe HBTs for Harsh Radiation Environment by Heavy Ion Irradiation”, IUAC Annual Report, Page no. 215-217, 2010-2011.
9. T. M. Pradeep, N. H. Vinayakaprasanna, K. C. Praveen, B.C. Hemaraju, Arshiya Anjum, N. Pushpa, K.Asokan,Ambuj Tripathi, K.G. Bhushan and A. P. Gnana Prakash, “An in-situ Investigation of 100 MeV Phosphorous ion irradiation on the Electrical Characteristics of NPN rf Power Transistors”, IUAC Annual Report, Page no.126-127, 2015-2016.
10. T. M. Pradeep, N. H. Vinayakaprasanna, K. C. Praveen, B.C. Hemaraju, Arshiya Anjum, N. Pushpa, K.Asokan,Ambuj Tripathi, K.G. Bhushan and A. P. Gnana Prakash, “80 MeV Nitrogen ion irradiation effects on the I-V characteristics of NPN rf Power Transistors”, IUAC Annual Report, Page no.156-157, 2015-2016.
11. Arshiya Anjum, N. H. Vinayakprasanna, K. C. Praveen, T. M. Pradeep, B. C. Hemaraju, N. Pushpa, Ambuj Tripathi, K. Asokan, J. B. M. Krishna,and A. P. Gnana Prakash, “Swift heavy ion induced radiation effects at Si/SiO2 interface of MOS devices”, IUAC Annual Report, Page no.157-158, 2015-2016.
12. T. M. Pradeep, N. H. Vinayakaprasanna, N. Pushpa, Ambuj Tripathi and A. P. Gnana Prakash, “An In-situ Investigation of Bromine and Copper Ion Irradiation on NPN Transistors”, IUAC Annual Report, Page no.113-114, 2018-2019.
13. Arshiya Anjum, T. M. Pradeep, Vinayakprasanna N Hegde, N. Pushpa, Ambuj Tripathiand A. P. Gnana Prakash, “Analysis of 140 MeV Copper and 160 MeV Bromine Ion Irradiation Effects on NChannel MOSFETs”, IUAC Annual Report, Page no.116, 2018-2019.
Invited Talk/ Special Lecture: 1
1. Presented special lecture “Advanced Physics”, on special lecture programme organized by SDM College, Mysore on 29th, August 2019.
Workshop/Conferences Organized
1. Two days National Webinar organized on “Recent Trends in Advanced Physics” during 29-30 July 2020 at PG Department of Physics, JSS College of Arts, Commerce and Science, Ooty Road, Mysore
Workshop/Conferences Attended
1. UGC-DAE sponsored “Thematic Workshop of Materials Science Using Ion Beams and Gamma Radiation” organized by VECC, Kolkata at Kolkata during May 28-29, 2019
2. UGC sponsored two day State Level Seminar on “Role of Nuclear Science in Energy Production and Societal Applications” at JSS College of Arts, Commerce & Science, Ooty Road, Mysore held on 1-2 March 2019.
3. UGC sponsored one day workshop on “Capacity Building” at JSS College of Arts, Commerce & Science, Ooty Road, Mysore held on 24th March 2018.
4. UGC Sponsored State Level Seminar on “Relativity and Gravitational Waves” at JSS College of Arts, Commerce & Science, Ooty Road, Mysore held on10th March 2018.
5. UGC sponsored two day Workshop on “Research and Publication” at JSS College of Arts, Commerce & Science, Ooty Road, Mysore held on 18-19 March 2016.
6. UGC sponsored three days Workshop on “Statistical Physics” held at JSS College of Arts, Commerce & Science, Ooty Road, Mysore during 25-27, November 2015.
7. One day Workshop on “Computational Materials Science” organized by Department of Studies in Physics, University of Mysore, Mysore held on 24th Jan 2014.
8. Two days Regional Conference on “Science and Technology for Education and Health Care” Jointly organized by KSTA and JSS College of Arts, Commerce & Science during 21st and 22nd Feb 2014 at JSS College of Arts, Commerce & Science, Ooty Road, Mysore-570025.
9. Three days Workshop on “Theoretical Physics Lectures” organized by The Indian Academy of Sciences (Bangalore), Indian National Science Academy (New Delhi) and The National Academy of Sciences, India (Allahabad) in collaboration with DoS in Physics, University of Mysore, Mysore during 8th to 10th Nov 2012.
10. Two days National Workshop on “Science with ECR Based keV Ion Beams” organized jointly by VECC, Kolkata and UGC-DAE Consortium for Scientific Research-Kolkata Centre at VECC Kolkata during January 20-21, 2011.
Academic/Administrative Experience
1. Chairperson - PG Department of Physics, JSS College, Ooty Road, Mysore - 2020-till date
2. Chairperson BOE in Physics (PG), JSS College, Ooty Road, Mysore 2020-till date
3. Member BOS in Physics (PG), JSS College, Ooty Road, Mysore 2018-22
4. Member BOS in Physics (PG), JSS College, Ooty Road, Mysore 2013-15
5. Member Admission Committee, JSS College, Ooty Road, Mysore 2013-till date